MMBT3904LT1 Datasheet | Silicon Standard

Features - Power dissipation, PCM:0.2W (Tamb=25℃) - Collector current, ICM: 0.2A - Collector-base voltage, V(BR)CBO: 60V - Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ - SOT-23 plastic-encapsulate package Device Marking: AM1 Transistors (NPN) ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO VIc= 1 mA, IB=0 Min 60 Max 40 Unit V V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 Collector cut-off current ICBO VCB= 60V, IE=0 0.1 µA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 µA Emitter cut-off...