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MMBT3904LT1 - NPN Transistor

Key Features

  • Power dissipation, PCM:0.2W (Tamb=25℃).
  • Collector current, ICM: 0.2A.
  • Collector-base voltage, V(BR)CBO: 60V.
  • Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃.
  • SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN).

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Datasheet Details

Part number MMBT3904LT1
Manufacturer Silicon Standard
File Size 70.59 KB
Description NPN Transistor
Datasheet download datasheet MMBT3904LT1 Datasheet

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Full PDF Text Transcription (Reference)

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FEATURES „ Power dissipation, PCM:0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ „ SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN) ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO VIc= 1 mA, IB=0 Min 60 Max 40 Unit V V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 µA Collector cut-off current ICEO VCE= 40V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.