| Part Number | MMBT3904LT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT3904LT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE
MMBT3904LT1
Motorola Preferred Device
3
2 EMITTER
1 2
MAXIM.
or * Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector * Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter * Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR * 5 = 1.0 0.75 0.. |
MMBT3904LT1 Datasheet and Specifications PDF
The MMBT3904LT1 is a General Purpose Transistor.
| Part Number | MMBT3904LT1 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Silicon Standard |
| Overview |
FEATURES
Power dissipation, PCM:0.2W (Tamb=25℃) Collector current, ICM: 0.2A Collector-base voltage, V(BR)CBO: 60V Operating and storage junction temperature range:
TJ, Tstg: -55℃ to +150℃ S.
* Power dissipation, PCM:0.2W (Tamb=25℃) * Collector current, ICM: 0.2A * Collector-base voltage, V(BR)CBO: 60V * Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ * SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN) ELECTRICAL CHARACTERIST. |