Datasheet4U Logo Datasheet4U.com

SSM20P02J - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

This page provides the datasheet information for the SSM20P02J, a member of the SSM20P02H P-CHANNEL ENHANCEMENT MODE POWER MOSFET family.

Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet preview – SSM20P02J

Datasheet Details

Part number SSM20P02J
Manufacturer Silicon Standard
File Size 314.97 KB
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet SSM20P02J Datasheet
Additional preview pages of the SSM20P02J datasheet.

📁 Similar Datasheet

  • SSM2000 - HUSH Stereo Noise Reduction (Analog)
  • SSM2005 - Decoder 5.1-Channel Soundfield Generator (Analog)
  • SSM200UF-A - (SSMxxxUF-A) HERMETIC ULTRAFAST DIODE (Sensitron)
  • SSM200UF3A - (SSMxxxUF3A) HERMETIC ULTRAFAST DIODE (Sensitron)
  • SSM2011 - Audio Preamplifier System (Solid State Micro Technology)
  • SSM2013 - VOLTAGE CONTROLLED AMPLIFIER (ETC)
  • SSM2014 - OPERATIONAL VOLTAGE CONTROLLED ELEMENT (ETC)
  • SSM2016 - DIFFERENTIAL AUDIO PREAMPLIFIER (Solid State Micro Technology)
  • SSM2017 - Self-Contained Audio Preamplifier (Analog)
  • SSM2018 - Trimless Voltage Controlled Amplifiers (Analog)
Other Datasheets by Silicon Standard
  • SSM20P02H - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • SSM2030GM - N- and P-channel Enhancement-mode Power MOSFET
  • SSM20G45EGH - N-channel Insulated-Gate Bipolar Transistor
  • SSM20G45EGJ - N-channel Insulated-Gate Bipolar Transistor
  • SSM20N03P - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • SSM20N03S - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • SSM2302N - N-channel Enhancement-mode Power MOSFET
  • SSM2304AGN - N-channel Enhancement-mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
SSM20P02H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement 2.5V gate drive capability Fast switching D G S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BV DSS R DS(ON) ID -20V 52mΩ -18A G D S TO-252(H) The TO-252 package is widely preferred for all commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (SSM20P02J) is available for low-profile applications.
Published: |