SSM2309GN
SSM2309GN is P-channel Enhancement-mode Power MOSFET manufactured by Silicon Standard.
DESCRIPTION
BV DSS R DS(ON) ID
The SSM2309GN is in a SOT-23-3 package, which is widely used for lower power mercial and industrial surface mount applications. It is well suited for low voltage applications such as DC/DC converters and and general switching applications.
SOT-23-3
-30V 75mΩ -3.7A
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol Rthj-a
Parameter Thermal Resistance, Junction-ambient3
Rating -30 ± 20 -3.7 -3 -12 1.38 0.01 -55 to 150 -55 to 150
Units V V A A A W
W/°C °C °C
Max.
Value 90
Unit °C/W
2/16/2005...