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SSM2302N - N-channel Enhancement-mode Power MOSFET

General Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM2302N
Manufacturer Silicon Standard
File Size 135.19 KB
Description N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM2302N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM2302N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive Small package outline Surface-mount package Description D SOT-23 G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. BV DSS RDS(ON) ID 20V 85mΩ 2.8A D Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 G S Rating 20 ± 12 2.8 2.2 10 1.25 0.