SSM2302N Overview
Description
D SOT-23 G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. BV DSS RDS(ON) ID 20V 85mΩ 2.8A D Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter G S Rating 20 ± 12 2.8 2.2 10 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max.
