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SSM2306N - N-channel Enhancement-mode Power MOSFET

General Description

Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.

The SOT-23 package is widely used for commercial and industrial applications.

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Datasheet Details

Part number SSM2306N
Manufacturer Silicon Standard
File Size 141.90 KB
Description N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM2306N Datasheet

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SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate-drive Lower on-resistance Surface-mount package Description D SOT-23 G S BVDSS RDS(ON) ID Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. The SOT-23 package is widely used for commercial and industrial applications. G 20V 32mΩ 5.3A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.