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SSM2306N
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Capable of 2.5V gate-drive Lower on-resistance Surface-mount package
Description
D
SOT-23 G
S
BVDSS RDS(ON) ID
Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.
The SOT-23 package is widely used for commercial and industrial applications.
G
20V 32mΩ 5.3A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.