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SSM2301N - P-CHANNEL ENHANCEMENT-MODE POWER MOSFET

General Description

Power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM2301N
Manufacturer Silicon
File Size 178.16 KB
Description P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Datasheet download datasheet SSM2301N Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SSM2301N P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Small package outline Surface-mount device S D BV DSS R DS(ON) ID -20V 130mΩ -2.3A Description SOT-23 G D Power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-23 package is widely preferred for commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. G S Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Rating - 20 ± 12 -2.3 -1.5 -10 1.25 0.