Datasheet Details
| Part number | SSM4507M |
|---|---|
| Manufacturer | Silicon Standard |
| File Size | 349.27 KB |
| Description | COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | SSM4507M_SiliconStandard.pdf |
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Overview: ..net SSM4507M PLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching performance D2 D1 D2 D1 D1 D1 D2 D2 N-Ch BV DSS 30V 36mΩ 6.0A -30V 72mΩ -4.
| Part number | SSM4507M |
|---|---|
| Manufacturer | Silicon Standard |
| File Size | 349.27 KB |
| Description | COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | SSM4507M_SiliconStandard.pdf |
|
|
|
Advanced Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is widely preferred for mercial and industrial surface mount applications and is well suited for low-voltage applications such as DC/DC converters.
G1 ID BV DSS R DS(ON) ID D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25°C ID@TA=70°C IDM PD@TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 6 4.8 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -4.2 -3.4 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.
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