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SSM4501GSD - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The advanced power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM4501GSD
Manufacturer Silicon Standard
File Size 420.40 KB
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet SSM4501GSD Datasheet

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www.DataSheet4U.net SSM4501GSD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D2 D1 D1 N-CH BVDSS RDS(ON) ID G2 30V 27mΩ 7A -30V 49mΩ -5A Simple Drive Requirement Low On-resistance Fast Switching Characteristic P-CH BVDSS RDS(ON) ID PDIP-8 S2 G1 S1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 G1 Pb-free; RoHS-compliant G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 40 2 0.