SSM6618M Overview
Description
D D D D SO-8 G SS S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BV DSS RDS(ON) ID 25V 30mΩ 7A D G S Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-amb Rating 25 ± 20 7 5.8 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max.
