SSM6680GM
SSM6680GM is N-channel Enhancement-mode Power MOSFET manufactured by Silicon Standard.
DESCRIPTION
The SSM6680GM acheives fast switching performance with low gate charge without a plex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.
The SSM6680M is supplied in an Ro HS-pliant SO-8 package, which is widely used for medium power mercial and industrial surface mount applications.
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID
IDM PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 70°C
Total power dissipation, TC = 25°C Linear derating factor
Value 30 ±25
11.5 9.5 50 2.5 0.02
Units V V A A A W
W/°C
TSTG TJ
Storage temperature range Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol RΘJA
Parameter Maximum thermal resistance, junction-ambient3...
