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SSM6680GM - N-channel Enhancement-mode Power MOSFET

Description

The SSM6680GM acheives fast switching performance with low gate charge without a complex drive circuit.

It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.

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Datasheet Details

Part number SSM6680GM
Manufacturer Silicon Standard
File Size 562.01 KB
Description N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM6680GM Datasheet
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Full PDF Text Transcription

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SSM6680GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 30V 11mΩ 11.5A Pb-free; RoHS-compliant SO-8 D D D D SO-8 G S SS DESCRIPTION The SSM6680GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM6680M is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 70°C Total power dissipation, TC = 25°C Linear derating factor Value 30 ±25 11.5 9.5 50 2.5 0.
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