SSM6923O Overview
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Vf @ 0.5V IF D A G S K Symbol VDS VKA VGS ID @ TA=25°C ID @ TA=70°C IDM IF IFM PD @ TA=25°C Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) Continuous Drain Current (MOSFET) Pulsed Drain Current1,2 (MOSFET) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Total Power Dissipation (MOSFET) Linear Derating Factor (MOSFET) Total Power Dissipation (Schottky) Linear Derating Factor (Schottky) TSTG TJ Storage Temperature Range Operating Junction Temperature Range 1 -55 to 150 -55 to 125 3 Rating -20 20 ± 12 - 3.5 - 2.8 - 30 1 25 1 Units V V V A A A A A W W/°C W W/ °C °C °C Thermal Data Symbol Rthj-a Parameter Rev.2.02 1/29/2004 1 of 5 SSM6923O Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min.
