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SSM90T03GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download the SSM90T03GP datasheet PDF. This datasheet also covers the SSM90T03GS variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SSM90T03GS is in a TO-263 package, which is widely used for commercial and industrial surface mount applications.

This device is suitable for low voltage applications such as DC/DC converters.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSM90T03GS-SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM90T03GP
Manufacturer Silicon Standard
File Size 277.21 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet SSM90T03GP Datasheet

Other Datasheets by Silicon Standard

Part Number Description
SSM90T03GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM90T03GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM90T03GS N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SSM9406GM N-channel Enhancement-mode Power MOSFET
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SSM9410M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
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SSM9475M N-channel Enhancement-mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSM90T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement D Fast switching G Pb-free, RoHS compliant. S DESCRIPTION BVDSS RDS(ON) ID The SSM90T03GS is in a TO-263 package, which is widely used for commercial and industrial surface mount applications. This device is suitable for low voltage applications such as DC/DC converters. The through-hole version, the SSM90T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. GD S ABSOLUTE MAXIMUM RATINGS G D S 30V 4mΩ 75A TO-263 (S) TO-220 (P) Symbol VDS VGS ID @ Tc=25°C ID @ Tc=100°C IDM PD @ Tc=25°C EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = 4.