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SSM9406GM - N-channel Enhancement-mode Power MOSFET

General Description

The SSM9406GM acheives fast switching performance with low gate charge without a complex drive circuit.

It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.

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Datasheet Details

Part number SSM9406GM
Manufacturer Silicon Standard
File Size 467.32 KB
Description N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM9406GM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM9406GM N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 30V 18mΩ 9A Pb-free; RoHS-compliant SO-8 D D D D SO-8 G S SS DESCRIPTION The SSM9406GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM9406GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 70°C Total power dissipation, TC = 25°C Linear derating factor Value 30 ±20 9 7.5 50 2.5 0.