The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM9410M
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement Low on-resistance Fast switching
D D D G D
BVDSS RDS(ON) ID
S S S
30V 6mΩ 18A
SO-8
Description
Advanced power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial and industrial surface-mount applications and is well suited for low voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 ± 12 18 15 80 2.5 0.
SSM9410M Datasheet
