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SSM9960GJ Datasheet N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Manufacturer: Silicon Standard

Download the SSM9960GJ datasheet PDF. This datasheet also includes the SSM9960GH variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SSM9960GH_SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM9960GJ
Manufacturer Silicon Standard
File Size 322.24 KB
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Download SSM9960GJ Download (PDF)

General Description

The SSM9960H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters.

The through-hole version, the SSM9960J in TO-251, is available for low-footprint vertical G D S TO-252 (H) This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GH or SSM9960GJ.

G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 40 ± 20 42 26 195 45 0.36 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Overview

SSM9960(G)H,J www.DataSheet.co.kr N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching G D BV DSS R DS(ON) ID 40V 16mΩ 42A.

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