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SSM9960M - Dual N-Channel Enhancement Mode Power MOSFET

This page provides the datasheet information for the SSM9960M, a member of the SSM9960GM Dual N-Channel Enhancement Mode Power MOSFET family.

Description

Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM9960M
Manufacturer Silicon Standard
File Size 274.67 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet SSM9960M Datasheet
Additional preview pages of the SSM9960M datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com SSM9960M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D2 D1 D1 D2 BV DSS R DS(ON) G2 S2 40V 20mΩ 7.8A ID SO-8 S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9960M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GM.
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