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SSM9962GM - DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

This page provides the datasheet information for the SSM9962GM, a member of the SSM9962M DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS family.

Description

Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

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Datasheet Details

Part number SSM9962GM
Manufacturer Silicon Standard
File Size 285.63 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Datasheet download datasheet SSM9962GM Datasheet
Additional preview pages of the SSM9962GM datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr SSM9962M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching characteristics D2 D1 D1 D2 BV DSS R DS(ON) G2 S2 40V 25mΩ 7A ID SO-8 S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9962M is in the SO-8 package, which is widely preferred for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9962GM.
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