SSM9980M Datasheet | Silicon Standard

Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BV DSS R DS(ON) ID 80V 52mΩ 4.6A D1 G1 G2 D2 The SSM9980M is in the SO-8 package, which is widely preferred for S1 S2 mercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature...