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SSM4226GM Datasheet Dual N-channel Enhancement-mode Power MOSFET

Manufacturer: Silicon Storage Technology

Overview: SSM4226M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Simple drive requirement High VGS rating D2 D1 D1 D2 BVDSS R DS(ON) G2 S2 30V 18mΩ 8.2A ID SO-8 ..

Datasheet Details

Part number SSM4226GM
Manufacturer Silicon Storage Technology
File Size 166.71 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Datasheet SSM4226GM_SiliconStorageTechnology.pdf

General Description

D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM.

Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

SSM4226GM Distributor