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SSM4226M Datasheet Dual N-channel Enhancement-mode Power MOSFET

Manufacturer: Silicon Storage Technology

Overview: SSM4226M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Simple drive requirement High VGS rating D2 D1 D1 D2 BVDSS R DS(ON) G2 S2 30V 18mΩ 8.2A ID SO-8 ..

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number SSM4226M
Manufacturer Silicon Storage Technology
File Size 166.71 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Datasheet SSM4226M SSM4226GM Datasheet (PDF)

General Description

D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM.

Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 8.2 6.7 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max.

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