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SSM4226M - DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Download the SSM4226M datasheet PDF. This datasheet also covers the SSM4226GM variant, as both devices belong to the same dual n-channel enhancement-mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM.

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Note: The manufacturer provides a single datasheet file (SSM4226GM_SiliconStorageTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM4226M
Manufacturer Silicon Storage Technology
File Size 166.71 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Datasheet download datasheet SSM4226M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSM4226M/GM DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Simple drive requirement High VGS rating D2 D1 D1 D2 BVDSS R DS(ON) G2 S2 30V 18mΩ 8.2A ID SO-8 www.DataSheet4U.com S1 G1 Description D1 D2 Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 G2 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM4226GM. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 ± 20 8.2 6.7 30 2 0.