• Part: SST37VF040
  • Manufacturer: Silicon Storage Technology
  • Size: 405.19 KB
Download SST37VF040 Datasheet PDF
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SST37VF040 Description

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST37VF512/010/020/040 can be electrically erased and programmed at least 1000 times using an external programmer, e.g., to change the contents of devices in inventory. The SST37VF512/010/020/040 have to be erased prior to programming.

SST37VF040 Key Features

  • 2.7-3.6V Read Operation
  • Superior Reliability
  • Endurance: At least 1000 Cycles
  • Greater than 100 years Data Retention
  • Low Power Consumption
  • Active Current: 10 mA (typical)
  • Standby Current: 2 µA (typical)
  • Fast Read Access Time
  • Latched Address and Data
  • Fast Byte-Program Operation