SST39LF040 Description
The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.
SST39LF040 Key Features
- Organized as 128K x8 / 256K x8 / 512K x8
- Single Voltage Read and Write Operations
- 3.0-3.6V for SST39LF010/020/040
- 2.7-3.6V for SST39VF010/020/040
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption (typical values at 14 MHz)
- Active Current: 5 mA (typical)
- Standby Current: 1 µA (typical)