SST39VF160Q Datasheet | Silicon Storage Technology

FEATURES : - Organized as 1 M X 16 - Single 2.7V-only Read and Write Operations - VDDQ Power Supply to Support 5V I/O for SST39VF160Q - VDDQ not available on SST39VF160 - Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention - Low Power Consumption: - Active Current: 15 m A (typical) - Standby Current: 3 µA (typical) - Auto Low Power Mode: 3 µA (typical) - Small Sector Erase Capability (512 sectors) - Uniform 2 KWord sectors - Block Erase Capability (32 blocks) - Uniform 32 KWord blocks - Fast Read Access Time: - 70 and 90 ns PRODUCT DESCRIPTION The SST39VF160Q/VF160 devices are 1M x 16 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS Super Flash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39VF160Q/VF160 write (Program or Erase) with a 2.7V-only power supply. The SST39VF160Q/VF160 conform to JEDEC standard pinouts for x16 memories. Featuring high performance word program, the SST39VF160Q/VF160 devices provide a maximum word-program time of 10 µsec. The entire memory can typically be erased and programmed word by word in 7 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the pletion of Program operation. To protect against inadvertent write, the SST39VF160Q/VF160 have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39VF160Q/VF160 are offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39VF160Q/VF160 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST39VF160Q/VF160 significantly improve performance and reliability, while lowering power consumption. The SST39VF160Q/VF160...