Datasheet4U Logo Datasheet4U.com

SST39VF200A - 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

Download the SST39VF200A datasheet PDF. This datasheet also covers the SST39VF400A variant, as both devices belong to the same 2 mbit / 4 mbit / 8 mbit (x16) multi-purpose flash family and are provided as variant models within a single manufacturer datasheet.

General Description

The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology.

Key Features

  • Organized as 128K x16 / 256K x16 / 512K x16.
  • Single Voltage Read and Write Operations.
  • 3.0-3.6V for SST39LF200A/400A/800A.
  • 2.7-3.6V for SST39VF200A/400A/800A.
  • Superior Reliability.
  • Endurance: 100,000 Cycles (typical).
  • Greater than 100 years Data Retention.
  • Low Power Consumption (typical values at 14 MHz).
  • Active Current: 9 mA (typical).
  • Standby Current: 3 µA (typical).
  • Sector-Erase Capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SST39VF400A_SiliconStorageTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SST39VF200A
Manufacturer Silicon Storage Technology
File Size 1.30 MB
Description 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
Datasheet download datasheet SST39VF200A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A A Microchip Technology Company SST39VF200A / SST39VF400A / SST39VF800A Data Sheet The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/ 800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories.