SST39VF512 Description
The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability pared with alternate approaches. The SST39LF512/ 010/020/040 devices write (Program or Erase) with a 3.03.6V power supply. The SST39VF512/010/020/040 devices write with a 2.7-3.6V power supply.
SST39VF512 Key Features
- Single Voltage Read and Write Operations
- 3.0-3.6V for SST39LF512/010/020/040
- 2.7-3.6V for SST39VF512/010/020/040
- Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
- Low Power Consumption
- Active Current: 10 mA (typical)
- Standby Current: 1 µA (typical)
- Sector-Erase Capability