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2N5566 - dual n-channel JFET

Download the 2N5566 datasheet PDF. This datasheet also covers the 2N5564 variant, as both devices belong to the same dual n-channel jfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5564-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5566
Manufacturer Siliconix
File Size 71.51 KB
Description dual n-channel JFET
Datasheet download datasheet 2N5566 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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matched dual n-channel JFETs designed for • • • H Siliccnix Performance Curves NCB See Section 4 • Wideband Differential Amplifiers • Commutators BENEFITS • High Gain 7500 ~mho Minimum 9fs • Specified Matching Characteristics *ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Gate Voltage .......................... ±80V Gate·Drain or Gate·Source Voltage .............. -40 V Gate Current ............................... 50mA Device Dissipation (Each Side), T A = 25°C (Derate 2.2 mW;oC) ....................... 325mW Total Device Dissipation, T A = 25°C (Derate 3.3 mW;oC) ..............•........ 650mW Storage Temperature Range .............. -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ...............300°C TO·71 See Section 6 ~~G, G2 8, 52 82 G, 30 o·o.