DN5565 Datasheet | Siliconix

matched dual n-channel JFETs Siliconix designed for - - - Performance Curves NCB-D See Sedion 4 - Wideband Differential Amplifiers - mutators ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Gate Voltage .......................... ±80V Gate-Drain or Gate-Source Voltage .....- ..- - - ... -40 V Gate Current .....- .- - - .- .- - .- .- ..- .- .....- .. 50 rn A Device Dissipation (Each Side), TA = 25°C (Derate 2.2 m W/o C) ..- ...- - ..- ....- .- .- - .- 325m W Total Device Dissipation, TA = 25°C (Derate 3.3 m W/o C) - .- - ..- - - - - - - .- .- .- ..- . 650m W Storage Temperature Range - - - .- ..- - ....- -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ........- ......300°C BENEFITS - High Gain 7500 t Lmho Minimum gfs - Specified Matching Characteristics TO-71 See Section...