DN5566 Description
matched dual n-channel JFETs H Siliconix designed for Performance Curves NCB-D See Sedion 4 Wideband Differential Amplifiers mutators RATINGS (25°C) Gate-Gate Voltage .......................... ±80V Gate-Drain or Gate-Source Voltage ..... 50 rnA Device Dissipation (Each Side), TA = 25°C (Derate 2.2 mW/oC).