E111 Datasheet | Siliconix

-C'? n-channel JFETs &II C'4 designed for - - - -&II Analog Switches -- - - &II Choppers - mutators Performance Curves NC See Section 4 BENEFITS - Low Insertion Loss RDS(on) <30n (Elll) - No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver - Fast Switching t D(on) + tr = 13 ns Typical - Short Sample and Hold Aperture Time Cgd(off) < 5 p F Cgs(off) < 5 p F ABSOLUTE MAXIMUM RATINGS (25°C) Gate- Drain or Gate- Source Voltage -35 V Gate Current 50m A Total Device Dissipation (25°C Free- Air Temperature) 350m W Power Derating (to +125°C). 3.5m Wr C Storage Temperature Range -55 to +125°C Operating Temperature Range: -55 to +125°C Lead Temperature (1/16" from case for 10 seconds) 300°C TO- IOS See Section 5 "~: R 00,02 '0 S BOTTOM VIEW h~ S ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristics Ell1 E112 E'13 Unit Min TV. Max Min TV. Max Min Tv. Max Test Conditions 'GSS Gate Reverse Current (Note 1) '"2 S I-T VGS(off) Gate-Source Cutoff Voltage -3 3 A BVGSS Gate-Source Breakdown...