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E211 - n-channel JFET

This page provides the datasheet information for the E211, a member of the E210 n-channel JFET family.

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Datasheet Details

Part number E211
Manufacturer Siliconix
File Size 56.82 KB
Description n-channel JFET
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n-channel JFETs -- designed for . . . N -IU • General Purpose Amplifiers o N IU Performance Curves NZF See Section 4 BENEFITS • High Gain GFS = 7000 ,umho Minimum (E211, E212) • High Input Impedance IGSS = 100 pA Maximum Ciss = 5 pF Typical ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage .............. -25 V Gate Cu rrent ............................... 10 mA Total Device Dissipation (25°C Free-Air Temperature) . . . . . . . . . . . . . .. 350 mW Power Derating (to +125°C) ................ 3.5 mWrC Storage Temperature Range .............. -55 to +125°C Operating Temperature Range .. _......... -55 to +125°C Lead Temperature (1/16" from case for 10 seconds) ..............
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