E212
n-channel JFETs
-- designed for . . .
-IU
- General Purpose Amplifiers o
Performance Curves NZF See Section 4
BENEFITS
- High Gain
GFS = 7000 ,umho Minimum (E211, E212)
- High Input Impedance IGSS = 100 p A Maximum Ciss = 5 p F Typical
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage -25 V Gate Cu rrent 10 m A Total Device Dissipation
(25°C Free-Air Temperature)
- - . . . .. 350 m W Power Derating (to +125°C) 3.5 m Wr C Storage Temperature Range -55 to +125°C Operating Temperature Range .. _ -55 to +125°C Lead Temperature
(1/16" from case for 10 seconds) 300°C
TO- 106 See Section 5
DEG :)
S BOTTOM VIEW
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
E210 Min Typ
1 S t GSS
Gate Reverse Current (Note 1)
1"2 T VGS(off) Gate-Source Cutoff Voltage
13 A BVGSS 1'4 ~ IDSS
Gate-Source Breakdown Voltage Saturation Drain Current...
