Siliconix J113A
N-Channel JFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) PARAMETERS/TEST CONDITIONS Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Power Derating Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) SYMBOL VGO VGS IG Po TJ Tstg TL LIMIT -40 -40 50 360 3.27 -55 to 135 -55 to 150 300 UNITS V mA mW mW/oC °C 4-73 J111A SERIES g Siliconix incorporatedELECTRICAL CHARACTERISTICS
1 JlllA LIMITS Jl12A Jl13A PARAMETER SYMBOL TEST CONDITIONS TYp2 MIN MAX MIN MAX MIN MAX UNIT STATIC Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage V(BR)GSS VGS(OFF) I G =-l.JJ.A,Vos =OV Vos = 5 V, 10 = 1 .JJ.A -55 -40 -40 -40 V -5 -10 -2 -7 -1 ":5 Saturation Drain Current3 loss Vos = 15 V, VGS = 0 V 30 15 8 rnA Gate Reverse Current IGSS Gate Operating Current IG Drain Cutoff Current 10(OFF) Drain-Source On-Resistance Gate-Source Forward Voltage rOS(ON) VGS(F) VGS = -15 V VOS = 0 V -5 ITA =125°C -3 VOG=15V, 10 =10mA -5 Vos = 5 V, VGS...