M117
- enhancement-type
--:IE
() n-channel
MOSFET
:IE designed for
- -
- - General Purpose Amplifiers
- Analog Switches
- Digital Switching
Performance Curves MBN MBNA See Section 4
BENEFITS
- High Input Impedance 1 p A Maximum (Ml17)
- Low Insertion Loss
RDS(on) = 100 n Maximum
- Rugged Zener Diode Input Protection
ABSOLUTE MAXIMUM RATINGS (25°C)
Drain-to-Source Voltage 30V Gate-to-Source Voltage Ml16 30 V Gate-to-Source Voltage Ml17 ±50 V Gate-to-Drain Voltage Ml16
- -
- . . . . 30 V Gate-to-Drain Voltage Ml17 ±50V
Drai n Current 50m A
Gate Zener Current ... M116 ±0.1 m A Storage Temperature -65 to 150"C
Operating Junction Temperature -55 to +125°C
Total Device Dissipation (Derate 2.25 m W;o C to 125°C) 225m W
TO-72 See Section 5 p DL :: q D:L=~:
!1 D Be G M116
D~
1 B...
