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-..... enhancement-type
--:IE
()
n-channel
MOSFET
:IE designed for • • •
• General Purpose Amplifiers • Analog Switches • Digital Switching
H
Performance Curves MBN MBNA See Section 4
BENEFITS
• High Input Impedance 1 pA Maximum (Ml17)
• Low Insertion Loss
RDS(on) = 100 n Maximum
• Rugged Zener Diode Input Protection
ABSOLUTE MAXIMUM RATINGS (25°C)
Drain-to-Source Voltage ....................... 30V Gate-to-Source Voltage Ml16 ................... 30 V Gate-to-Source Voltage Ml17 .................. ±50 V Gate-to-Drain Voltage Ml16 . . . . . . . . . . . . . . . . . . . 30 V Gate-to-Drain Voltage Ml17 .................. ±50V
Drai n Current ............................. 50mA
Gate Zener Current ... M116 ................ ±0.1 mA Storage Temperature ...................