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ND2012E - N-Channel Depletion-Mode MOS Transistors

Download the ND2012E datasheet PDF. This datasheet also covers the ND2012L variant, as both devices belong to the same n-channel depletion-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (ND2012L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ND2012E
Manufacturer Siliconix
File Size 96.56 KB
Description N-Channel Depletion-Mode MOS Transistors
Datasheet download datasheet ND2012E Datasheet

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Other Datasheets by Siliconix

Part Number Description
ND2012L N-Channel Depletion-Mode MOS Transistors
ND2020E N-Channel Depletion-Mode MOS Transistors
ND2020L N-Channel Depletion-Mode MOS Transistors
ND2406B N-Channel Depletion-Mode MOS Transistors
ND2406L N-Channel Depletion-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.16 TO-92 ND2012E 200 12 0.22 TO-206AC tcrSiliconix ~ incorporatE!d TO-92 BOTTOM VIEW ~r::::::4 ~ ~ 1 SOURCE . 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW Performance Curves: VDDQ20 (See Section 7) 1 SOURCE 2 GATE 3 DRAIN & CASE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL ND2012L ND2012E 2 Drain-Source Voltage Vos 200 200 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA= 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VGS 10 10M Po Tj.