TEMIC Semiconductors ND2012L
N-Channel Depletion-Mode MOSFET Transistors
| Part No. | ND2012L |
|---|---|
| Datasheet | ND2012L Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | N-Channel Depletion-Mode MOSFET Transistors |
| Buy | Stock & Price |
FEATURES
D D D D D High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 W Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Benefits D D D D D Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed SwitchingAPPLICATIONS
D D D D D Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-226AA (TO-92) S 1 G 2 D 3 Top ViewABSOLUTE MAXIMUM RATINGS
(TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg ND2012L 200 "30 0.16 0.1 0.8 0.8 0.32 156 ND2020L 200 "30 0.132 0.083 0.8 0.8 0.32 156 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range W _C/W _C –55 to 150 Notes a. Pulse width limited by maximum junction temperature.
