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ND2012 SERIES
N-Channel Depletion-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSV rOS(ON) 10
NUMBER (V)
(n.)
(A)
PACKAGE
ND2012L 200
12 0.16
TO-92
ND2012E 200
12 0.22 TO-206AC
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TO-92
BOTTOM VIEW
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1 SOURCE . 2 GATE
3 DRAIN
TO-206AC (TO-52)
BOTTOM VIEW
Performance Curves: VDDQ20 (See Section 7)
1 SOURCE 2 GATE 3 DRAIN & CASE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
ND2012L
ND2012E 2
Drain-Source Voltage
Vos
200
200
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA= 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGS 10 10M Po Tj.
ND2012L Datasheet
