The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
n-channel JFET
designed for • • •
• VHF Amplifiers • Oscillators • Mixers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ............... -25 V
Gate Current ............................... 10mA
Total Device Dissipation (Derate 1.7 mWrC) ..... 300 mW
Storage Temperature Range .............. -65 to +200°C
Lead Temperature (1/16" from case for 10 seconds)
.............
300°C
H
Siliconix
-----
Performance Curves NZB See Section 4
BENEFITS • High Power Gain
16 dB Typ @ 105 MHz, CommonGate 11 dB Typ @450 MHz, CommonGate • Low Noise Figure 1.5 dB Typ@ 105 MHz 2.