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VDDQ20 - N-Channel Depletion-Mode MOSFET

Datasheet Summary

Features

  • High Breakdown Voltage> 200 V.
  • Low rOS(on) < 3 n TYPE Single.

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Datasheet Details

Part number VDDQ20
Manufacturer Siliconix
File Size 195.45 KB
Description N-Channel Depletion-Mode MOSFET
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Full PDF Text Transcription

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~Siliconix ~ im::orporated VDDQ20 N-Channel Depletion-Mode MOSFET DESIGNED FOR: o Switching • Amplification FEATURES • High Breakdown Voltage> 200 V • Low rOS(on) < 3 n TYPE Single PACKAGE DEVICE TO-206AC • ND2012E, ND2020E TO-92 • ND2012L, ND2020L Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad 0.010 (0.254) 0.0087 (0.2209) Source Pad 0.0070 (0.1778) 0.010 (0.254) T0.038 1 •(0.965) 7-95 VDDQ20 TYPICAL CHARACTERISTICS ~.-r-Sinicloircpoornatiexd On-Resistance & Drain Current vs. Gate-Source Cutoff Voltage 25 r---~-----r----~----r----,1000 ros @ 10 = 20 rnA, VGS = 0 V = =20 I----Ifo loss @ Vos 7.5 V, VGS 0 V 800 On-Resistance vs. Drain Current ::I~~tfIIIIIIV II ~IIIII ros (.0. ) 15 600 10 (rnA) 10 ~---4----~~~~----~--~400 rOS (.0.
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