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VDDV24 - N-Channel Depletion-Mode MOSFET

Key Features

  • High Breakdown> 240 V.
  • LowrOS(on).

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Datasheet Details

Part number VDDV24
Manufacturer Siliconix
File Size 202.79 KB
Description N-Channel Depletion-Mode MOSFET
Datasheet download datasheet VDDV24 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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..rSiliconix ~ incorporated VDDV24 N-Channel Depletion-Mode MOSFET DESIGNED FOR: • Switching • Amplification FEATURES • High Breakdown> 240 V • LowrOS(on)<10n TYPE Single PACKAGE DEVICE TO-205AD • ND2406B, ND2410B TO-92 • ND2406L, ND2410L Chip • Available as above specifications GEOMETRY DIAGRAM Gate Pad ....... 1~ (0.127) - 0.007 (0.178) ..••i••..•.•••..•.•••..••.••..••.••..•..•..•.•..•..•..•..•..•..•...•...•...•...•...•... .............................................................•i •••••••••••••••••••••••••••••••••••••• . . . . . . . . . . . . . . . . 11 ••• 0.058 (1.47) Source Pad 0.006 (0.152) . .....................••••'u............u •••••• ••••••• 1~.~~~0~.05~3~~~.10.007 (0.178) "1111" ••••••• (1.35) ..