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VN0603T - N-Channel Enhancement-Mode MOS Transistors

Download the VN0603T datasheet PDF. This datasheet also covers the VN0603L variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN0603L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN0603T
Manufacturer Siliconix
File Size 95.72 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN0603T Datasheet

📁 Similar Datasheet

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Other Datasheets by Siliconix

Part Number Description
VN0603L N-Channel Enhancement-Mode MOS Transistors
VN0605T N-Channel Enhancement-Mode MOS Transistor
VN0606M N-Channel Enhancement Mode MOSFET Transistors
VN0606N N-Channel Enhancement Mode MOSFET Transistors
VN0610L N-Channel Enhancement-Mode MOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
fCrSiliconix ~ incorporated VN0603 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (,(1) (A) PACKAGE VN0603L 60 3.5 0.30 TO-92 VN0603T 60 3.5 0.22 SOT-23 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDS06 (See Section 7) SOT-23 TOP VIEW 1 DRAIN 2 SOURCE 3 GATE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN0603L VN0603T Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA= 100°C Power Dissipation TA= 25°C TA=100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M PD Tj. Tstg It 60 60 ±30 0.30 ±30 0.22 0.21 0.14 1 0.8 0.