VN0606M Datasheet | Siliconix

Features D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 p F Fast Switching Speed: 9 ns Low Input and Output Leakage TO-226AA (TO-92) S 1 Benefits D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-237 (Tab Drain) S 1 Applications D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-220SD (Tab Drain) S 1 3 Top View TN0601L VN0606L 3 Top View VN0606M 3 Top View VN66AFD Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Maximum Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Updates to this data sheet may be obtained via facsimile by calling Siliconix Fax Back, 1-408-970-5600. Please request Fax Back document #70201. TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD Rth JA Rth JC TJ, Tstg TN0601L 60 "20 0.47 0.29 1.5 0.8 0.32 156 VN0606L 60 "30 0.33 0.21 1.6 0.8 0.32 156 VN0606M 60 "30 0.39 0.25 2 1.0 0.4 125 VN66AFDb 60 "30 1.46 0.92 3 15 6 Unit W _C/W _C - 55 to 150 Siliconix S-52426- Rev. C, 14-Apr-97 TN0601L, VN0606L/M, VN66AFD Specificationsa Limits TN0601L VN0606L VN0606M VN66AFD Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Threshold .. Symbol Test...