VN0606L Datasheet | Vishay

FEATURES D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 p F Fast Switching Speed: 9 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-226AA (TO-92) S 1 Device Marking Front View TN0601L “S” TN 0601L xxyy VN0606L S TO-220SD (Tab Drain) 1 Device Marking Front View VN66AFD G 2 VN66AFD “S” xxyy “S” = Siliconix Logo xxyy = Date Code Top View VN66AFD “S” VN 0606L xxyy “S” = Siliconix Logo xxyy = Date Code Top View TN0601L VN0606L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Document Number: 70201 S-04279- Rev. E, 16-Jul-01 .vishay. TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD Rth JA Rth JC TJ, Tstg TN0601L 60 "20 0.47 0.29 1.5 0.8 0.32 156 60 "30 0.33 0.21 1.6 0.8 0.32 156 VN66AFDb 60 "30 1.46 0.92 3 15 6 Unit - 55 to 150 _C/W _C 11-1 TN0601L, VN0606L, VN66AFD Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TN0601L VN0606L VN66AFD Parameter Static Drain-Source Breakdown Voltage Gate-Threshold...