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VN1706L, VN1706M
N-Channel Enhancement-Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(!l )
(A)
PACKAGE
VN1706L
170
6
0.22
TO-92
VN1706M 170
6
0.25 TO-237
Performance Curves: VNDB24 (See Section 7)
TO-92
BOTTOM VIEW
1 SOURCE 2 GATE
3 DRAIN
TO-237
BOTTOM VIEW
1 SOURCE
2 GATE 3 DRAIN
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
VN1706L
VN1706M
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1 Power Dissipation
TA= 25DC TA = 100DC
TA= 25DC TA = 100DC
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
Vos VGS
10
10M
Po Tj. T stg
TL
170
170
±30 0.22 0.14
±30 0.25 0.16
2.3
2.
VN1706L Datasheet
