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VN1706 - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices.

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Datasheet Details

Part number VN1706
Manufacturer Supertex
File Size 113.34 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet VN1706 Datasheet

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Other Datasheets by Supertex

Part Number Description
VN1710 N-Channel Enhancement-Mode Vertical DMOS Power FETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4 "-11 !iupertex inc. VN1706 VN1710 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVoas 170V 170V ROS(ON) (max) Srl 100 IO(ON) (min) 1.0A 1.0A TO-39 Order Number I Package TO-92 TO-220 VN170SB VN170SL VN170SD VN1710B VN1710L VN1710D Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Applications o Motor control o Converters o Amplifiers o Switches o Power supply circuits o Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.