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VN1706M - N-Channel Enhancement-Mode MOS Transistors

Download the VN1706M datasheet PDF. This datasheet also covers the VN1706L variant, as both devices belong to the same n-channel enhancement-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (VN1706L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VN1706M
Manufacturer Siliconix
File Size 94.33 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN1706M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.wLIrISinilciccrpocrnatiexc VN1706L, VN1706M N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (!l ) (A) PACKAGE VN1706L 170 6 0.22 TO-92 VN1706M 170 6 0.25 TO-237 Performance Curves: VNDB24 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN1706L VN1706M Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation TA= 25DC TA = 100DC TA= 25DC TA = 100DC Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) Vos VGS 10 10M Po Tj. T stg TL 170 170 ±30 0.22 0.14 ±30 0.25 0.16 2.3 2.