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fCTSiliconix
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PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER
(V)
(.n )
(A)
PACKAGE
VN4012L
400
12
0.16
TO-92
VN4012B 400
12
0.42 TO-205AF
VN3515L
350
15
0.15
TO-92
VN4012 SERIES
N-Channel Enhancement-Mode MOS Transistors
- ' § TO-92
BOTTOM VIEW
1 SOURCE
2 GATE
3 DRAIN
TO-205AF
BOTTOM VIEW
Performance Curves: VNDV40 (See Section 7)
1 SOURCE 2 GATE 3 DRAIN & CASE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL VN4012L VN4012B 2 VN3515L UNITS
Drain-Source Voltage Gate-Source Voltage
Vos
400
400
VGS
±30
±20
350 V
±30
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C 10
TA = 100°C
10M
0.16 0.10 0.65
0.42 0.27 1.3
0.15
0.09
A
0.60
Power Dissipation
TA= 25°C
0.
VN4012 Datasheet
