| Part Number | VN4012 Datasheet |
|---|---|
| Manufacturer | Supertex |
| Overview |
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power han.
* Free from secondary breakdown * Low power drive requirement * Ease of paralleling * Low CISS and fast switching speeds * Excellent thermal stability * Integral source-drain diode * High input impedance and high gain Applications * Motor controls * Converters * Amplifiers * Switches * Power supply c. |
VN4012 Datasheet and Specifications PDF
The VN4012 is a N-Channel Vertical DMOS FET.
| Part Number | VN4012 Datasheet |
|---|---|
| Description | N-Channel Enhancement-Mode MOS Transistors |
| Manufacturer | Siliconix |
| Overview | fCTSiliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN4012L 400 12 0.16 TO-92 VN4012B 400 12 0.42 TO-205AF VN3515L 350 15 0.15 TO-92 . nction-to-Ambient SYMBOL VN4012L VN4012B VN3515L UNITS RthJA 156 125 156 °C/W 1Pulse width limited by maximum junction temperature 2Reference case for all temperature tests 6-99 VN4012 SERIES ELECTRICAL CHARACTERISTICS 1 PARAMETER SYMBOL TEST CONDITIONS TYp2 STATIC Drain-Source Breakd. |
| Part Number | VN4012 Datasheet |
|---|---|
| Description | N-Channel Vertical DMOS FET |
| Manufacturer | Microchip Technology |
| Overview |
The VN4012 Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling ca.
* Free from Secondary Breakdown * Low Power Drive Requirement * Ease of Paralleling * Low CISS and Fast Switching Speeds * Excellent Thermal Stability * Integral Source-Drain Diode * High Input Impedance and High Gain Applications * Motor Controls * Converters * Amplifiers * Switches * Power Supply . |