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~Siliconix .L;II incorporated
VN40AFD
N-Channel Enhancement-Mode MOS Transistor
PRODUCT SUMMARY
V(BR)OSS rOS(ON)
10
(V)
(!l)
(A)
40
5
1.14
PACKAGE TO-22080
80 = Side Drain Performance Curves: VNDQ06 (See Section 7)
TO-220SD
TOP VIEW
o
1 SOURCE 2 GATE 3 & TAB - DRAIN
123
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current 1
Tc= 25°C Tc = 100°C
Power Dissipation
Tc= 25°C Tc = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
SYMBOL Vos VGS ID
10M Po Tj. Tstg
h
VN40AFD 40 ±30 1.14 0.
VN40AFD Datasheet
